PART |
Description |
Maker |
KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
ADM3491 ADM3491AR ADM3491AN ADM3491ARU |
3.3 V/ Full Duplex/ 840 uA 20 Mbps/ EIA RS-485 Transceiver 3.3 V, Full Duplex, 840 uA 20 Mbps, EIA RS-485 Transceiver MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:90V; Continuous Drain Current, Id:0.86A; On-Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AD; Drain-Source Breakdown Voltage:90V RoHS Compliant: No 3.3V, Full Duplex, 840uA, 20Mbps, EIA RS-485 Transceiver
|
Analog Devices, Inc.
|
HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
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AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No 1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic From old datasheet system JFET-N-CHANNEL SWITCH Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14 JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation] Intersil, Corp. HARRIS SEMICONDUCTOR
|
BUZ902DP BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
AP1702 AP1702AW AP1702AWL AP1702BW AP1702BWL AP170 |
4.63 V, 3-pin microprocessor reset circuit 4.38 V, 3-pin microprocessor reset circuit 3.08 V, 3-pin microprocessor reset circuit TRANSISTOR, JFET N TO-18 RECTIFIER SBR SINGLE 2A 30V 75A-ifsm 0.45Vf 0.2mA-ir PowerDI-123 3K/REEL JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78 3-Pin Microprocessor Reset Circuits 3引脚微处理器复位电路 JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V 3引脚微处理器复位电路 2.93 V, 3-pin microprocessor reset circuit 2.63 V, 3-pin microprocessor reset circuit 4.00 V, 3-pin microprocessor reset circuit
|
ANACHIP[Anachip Corp] ETC[ETC] 复位半导 NEC, Corp. Kingbright, Corp.
|
KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
ST63P56 ST6356 ST6357 ST6327 ST6326 ST63PXX ST6306 |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.8A; On-Resistance, Rds(on):0.062ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No 8位微控制器HCMOS背驮式电视应 (ST63Pxx) 8 Bit HCMOS Piggyback MCUs for TV Applications 8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS
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STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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